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Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves multiple high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our innovative team is helping connect, protect and power our planet.

We are looking for a Staff MMIC designer responsiblefor the development of innovative, leading-edge GaN and GaAs-based RF/Microwave products. This will involve design and development of MMIC-based RF/Microwave products using advanced GaN and/or GaAs technologies. You will be a key member of an integrated product development team that includes marketing, program management, mechanical engineering, product engineering, package engineering, test engineering, applications engineering, manufacturing, operations, quality and reliability, and senior management.

Key Roles and Responsibilities:

• Technical lead role for MMIC based product development.
• MMIC design using linear and nonlinear models and 2.5D and 3D electromagnetic simulators.
• Integrate MMIC(s) into single or multichip modules.
• Manage product checkout, optimization, and design verification testing (DVT) in the Microwave Lab.
• Execute DVT analysis and present results to the internal and/or external customer.
• Support product through critical lifecycle stages including concept/feasibility, development, qualification, and production.
• Publish novel design work internally or externally (IMS, BCICTS, GOMAC, etc.) to promote Qorvos technology and design capabilities. Submit invention disclosures for potential patents where applicable.

Required Technical Skills and Experience:

• Recent and relevant experience designing RFIC and/or MMIC amplifiers, switches, phase shifters, attenuators, time-delay units (TDUs), hybrid multichipmodules, or transmit/receive front-end modules (FEMs).
• Experience in advanced III-V compound semiconductor technologies, specifically GaN and GaAs.
• Understanding of FET behavioral characteristics is desired.
• User of either ADS or Microwave Office (MWO) nonlinear simulators; and one or more of the following 2.5D or 3D EM simulation tools: SONNET, Axiem, Momentum, or HFSS.
• Understanding microwave measurements and calibration methods: S-parameters, power, efficiency, source/load pull, noise figure, linearity, and intermodulation distortion.
• Strong written and oral communication skills with the ability to concisely summarize highly technical concepts.

Desired Experiences:<